field-effect transistor

(redirected from Tri-gate transistor)
Also found in: Dictionary, Encyclopedia.
Graphic Thesaurus  🔍
Display ON
Animation ON
Legend
Synonym
Antonym
Related
  • noun

Synonyms for field-effect transistor

a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field

References in periodicals archive ?
Intel is in the game, and the 3D Tri-Gate transistor capability at the 22nm node puts Intel approximately three years ahead of anybody in the world of semiconductor manufacturing, in our opinion, which is unprecedented," Mosesmann said.
headquarters, Intel called the new Tri-Gate transistors the next step in Moore's Law.
Available now in powerful, high-end desktop, laptop and sleek all-in-one (AIO) designs, the new processors are the first chips in the world made using Intel's 22-nanometer (nm) 3-D tri-Gate transistor technology.
Netronome will offer the world's first flow processors based on Intel's market-defining 3-D Tri-Gate transistor technology and will shatter system benchmarks for flow processor performance, power and cost in network and security applications.
Anticipating this, Intel research scientists in 2002 invented what they called a Tri-Gate transistor, named for the three sides of the gate.
Based on Intel's 14 nm 3D Tri-Gate transistor technology, Stratix 10 FPGAs and SoCs are designed to enable the highest performance, most power-efficient applications in the communications, military, broadcast and compute and storage markets.
Achronix's Speedster22i FPGAs are the industry's most advanced FPGAs built on Intel's ground breaking 22nm, 3-D Tri-Gate transistor technology.
Intel has successfully integrated three key elements -- tri-gate transistor geometry, high-k gate dielectrics, and strained silicon technology -- to once again produce record transistor capabilities.
Microsemi in Development on Intel's 22 Nanometer Tri-Gate Transistor Technology; Product Deliveries Expected to Begin in Late 2014 to Early 2015
25, 2013 /PRNewswire/ --Altera Corporation and Intel Corporation today announced that the companies have entered into an agreement for the future manufacture of Altera FPGAs on Intel's 14 nm tri-gate transistor technology.
Intel Corporation revealed new details of its advanced "tri-gate" transistor design this week at the 2003 Symposia of VLSI Technology and Circuits in Kyoto, Japan and said that the tri-gate transistor is moving from research to the development phase.
The tri-gate transistor design will allow Intel to build ultra-small transistors that achieve high performance with low power and continue driving the pace of Moore's Law.
We have certified the Synopsys Galaxy Design Platform for our mutual customers to implement, verify and signoff differentiated SoC designs targeting Intel's 14-nanometer technology with our second-generation of tri-gate transistors in high-volume manufacturing," said Ali Farhang, vice president, Design Enablement and Services, Intel Custom Foundry.
According to Intel, its 14nm low-power process technology, which includes the second generation of Tri-Gate transistors, is optimised for low-power applications.
They have also introduced chips with high dielectric constant materials and fin-fet or tri-gate transistors.
Full browser ?