field-effect transistor

(redirected from Tri-gate transistor)
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Synonyms for field-effect transistor

a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field

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Powered by 3rd generation Intel CoreTM Processors, made with the world's most advanced 22nm 3-D tri-gate transistors, these new Ultrabook devices are responsive and more secure to better protect personal information.
Intel is in the game, and the 3D Tri-Gate transistor capability at the 22nm node puts Intel approximately three years ahead of anybody in the world of semiconductor manufacturing, in our opinion, which is unprecedented," Mosesmann said.
The interesting thing being that these transistors will be the world's first three - dimensional transistors called Tri-Gate transistors.
headquarters, Intel called the new Tri-Gate transistors the next step in Moore's Law.
Available now in powerful, high-end desktop, laptop and sleek all-in-one (AIO) designs, the new processors are the first chips in the world made using Intel's 22-nanometer (nm) 3-D tri-Gate transistor technology.
Netronome will offer the world's first flow processors based on Intel's market-defining 3-D Tri-Gate transistor technology and will shatter system benchmarks for flow processor performance, power and cost in network and security applications.
The key to today's breakthrough is Intel's ability to deploy its novel 3-D Tri-Gate transistor design into high-volume manufacturing, ushering in the next era of Moore's Law and opening the door to a new generation of innovations across a broad spectrum of devices.
Intel has successfully integrated three key elements -- tri-gate transistor geometry, high-k gate dielectrics, and strained silicon technology -- to once again produce record transistor capabilities.
Intel Corporation revealed new details of its advanced "tri-gate" transistor design this week at the 2003 Symposia of VLSI Technology and Circuits in Kyoto, Japan and said that the tri-gate transistor is moving from research to the development phase.
The tri-gate transistor design will allow Intel to build ultra-small transistors that achieve high performance with low power and continue driving the pace of Moore's Law.
Built with Intel's next generation 3-D Tri-gate transistors, the adoption of Intel[R] Xeon[R] Processor E3-1200 v5 Series comes with the promise to enhance processor performance, while lowering the TDP.
The eleven contributions that make up the main body of the text are devoted to tri-gate transistors, the physics of silicon nanodevices, variability in scaled MOSFETs, self-heating effects in nanoscale 3D MOSFETs, NEMS devices, and several other related topics.
According to Intel, its 14nm low-power process technology, which includes the second generation of Tri-Gate transistors, is optimised for low-power applications.
Intel's Silvermont microarchitecture was designed and co-optimized with Intel's 22nm SoC process using revolutionary 3-D Tri-gate transistors.
Intel's Silvermont micro-architecture was designed and co-optimized with Intel's 22nm SoC process using revolutionary 3-D Tri-gate transistors.
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