FET

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Synonyms for FET

a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field

References in periodicals archive ?
Zaitlin, "Introduction to PHEMT's," in Pseudomorphic HEMT Technology and Applications, R.
The drain conductance of the AlGaN/GaN pHEMT is evaluated as
Ko, "A novel 60-GHz monolithic star mixer using gate-drain-connected pHEMT diodes," IEEE Trans.
Charged with the mission to focus on III-V activities OMMIC is developing new techniques for epitaxial wafer production, advanced PHEMT and MHEMT technologies as well as innovative circuits for fibre optics and new generation wireless standards.
WIN offers a wide spectrum of technologies for applications from 800 MHz to 100 GHz, including HBT, pHEMT, Switch and MHEMT.
Ref LTE Chan Max Linear PAE Max Pout BW (MHz) Pout (dBm) (%) (dBm) [3] 10 27.8 39 30.1 [4] 10 21.6 9 29.4 [18] 5 31.8 37 39 [19] 10 27.5 36.3 -- [20] 10 27.2 34.5 29 This 20 28 49 30.7 Work Ref Chip Area Process ([mm.sup.2]) [3] -- 2 [micro]m GaAs HBT+65 nm CMOS [4] 3 90 nm CMOS [18] 6.3 2 [micro]m GaAs HBT [19] 1.96 2 [micro]m GaAs HBT [20] 2.9 2 [micro]m GaAs HBT + 0.5 [micro]m GaAs PHEMT This 1 2 [micro]m GaAs HBT Work
Chang, "A fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator in 0.15-m PHEMT process," Microwave Conference Proceedings (APMC), 2011 Asia-Pacific, 864-867, 2011.
[3] demonstrated a V-band high isolation sub-harmonic mixer in standard 0.15-[micro]m pHEMT process.
Worldwide Computer Products News-19 June 2006-RFMD begins pre-production sampling of new GaAs pHEMT LNAs(C)1995-2006 M2 COMMUNICATIONS LTD http://www.m2.com
The CDQ0303-QS dual amplifier uses GaAs pseudomorphic high electron mobility transistor (PHEMT) device technology and is designed to cover the 500 to 6000 MHz frequency bands.
"With the development of new OC-192 and OC-768 components based on our high-speed GaAs HBT and PHEMT processes, Alpha is poised to support next-generation fiber-optic systems, high-speed enterprise networks and last-mile access technologies."
Practical GaAs PHEMT transistors are capable of approximately 1.7-dB noise figure at 80 GHz, and experimental results show 7-dB gain for 0.2-[micro]m-gate-length PHEMT structures at 90 GHz.
Gorden Cook, general manager of Qorvo's transport business unit said, "Qorvo's 0.15?m high-frequency GaN process delivers three times the power density of past-generation GaAs pHEMT solutions".
This excellent performance is achieved by using a hybrid microwave integrated circuit design and advanced GaAs pHEMT technology.
These RF amplifiers use a hybrid microwave integrated circuit design and advanced GaAs pHEMT technology to produce an unconditionally stable module.