Zaitlin, "Introduction to PHEMT
's," in Pseudomorphic HEMT Technology and Applications, R.
The drain conductance of the AlGaN/GaN pHEMT
is evaluated as
Ko, "A novel 60-GHz monolithic star mixer using gate-drain-connected pHEMT
diodes," IEEE Trans.
Charged with the mission to focus on III-V activities OMMIC is developing new techniques for epitaxial wafer production, advanced PHEMT
and MHEMT technologies as well as innovative circuits for fibre optics and new generation wireless standards.
WIN offers a wide spectrum of technologies for applications from 800 MHz to 100 GHz, including HBT, pHEMT
, Switch and MHEMT.
Ref LTE Chan Max Linear PAE Max Pout BW (MHz) Pout (dBm) (%) (dBm)  10 27.8 39 30.1  10 21.6 9 29.4  5 31.8 37 39  10 27.5 36.3 --  10 27.2 34.5 29 This 20 28 49 30.7 Work Ref Chip Area Process ([mm.sup.2])  -- 2 [micro]m GaAs HBT+65 nm CMOS  3 90 nm CMOS  6.3 2 [micro]m GaAs HBT  1.96 2 [micro]m GaAs HBT  2.9 2 [micro]m GaAs HBT + 0.5 [micro]m GaAs PHEMT
This 1 2 [micro]m GaAs HBT Work
Chang, "A fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator in 0.15-m PHEMT
process," Microwave Conference Proceedings (APMC), 2011 Asia-Pacific, 864-867, 2011.
 demonstrated a V-band high isolation sub-harmonic mixer in standard 0.15-[micro]m pHEMT
Worldwide Computer Products News-19 June 2006-RFMD begins pre-production sampling of new GaAs pHEMT
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The CDQ0303-QS dual amplifier uses GaAs pseudomorphic high electron mobility transistor (PHEMT
) device technology and is designed to cover the 500 to 6000 MHz frequency bands.
"With the development of new OC-192 and OC-768 components based on our high-speed GaAs HBT and PHEMT
processes, Alpha is poised to support next-generation fiber-optic systems, high-speed enterprise networks and last-mile access technologies."
Practical GaAs PHEMT
transistors are capable of approximately 1.7-dB noise figure at 80 GHz, and experimental results show 7-dB gain for 0.2-[micro]m-gate-length PHEMT
structures at 90 GHz.
Gorden Cook, general manager of Qorvo's transport business unit said, "Qorvo's 0.15?m high-frequency GaN process delivers three times the power density of past-generation GaAs pHEMT
This excellent performance is achieved by using a hybrid microwave integrated circuit design and advanced GaAs pHEMT
These RF amplifiers use a hybrid microwave integrated circuit design and advanced GaAs pHEMT
technology to produce an unconditionally stable module.