Parameter Description Values [E.sub.g1] Crystal silicon energy band 1.12 ev [E.sub.g2] Poly silicon energy band 1.12 ev d Si nanowires diameter 300/400/500 nm P Si nanowires array 600/800/1000 nm periodicity h Si nanowires length 4 [micro]m H Thickness of n-type silicon
2 [micro]m substrate phos.c n-type concentration of Si 1 x [10.sup.13] [cm.sup.-3] [N.sub.c] Effective density of states 2.8 x [10.sup.19] in silicon CB [cm.sup.-3] t Thickness of p-type poly 0.05 [micro]m silicon shell [N.sub.v] Effective density of states 1.04 x [10.sup.19] in silicon VB [cm.sup.-3] boron.c p-type concentration of 1 x [10.sup.16] [cm.sup.-3] poly Si [chi] Crystal Silicon electron 4.05 ev affinity m ITO thickness 0.1 [micro]m Table 2: Summary of device performance of nanowires core-shell solar cell.
The channel consists of a 30 nm thick n-type silicon
channel contacted to source and drain terminals and insulated from the substrate by a 30 nm thick buried oxide layer.
Foll, "Formation mechanism and properties of electrochemically etched trenches in n-type silicon
," Journal of the Electrochemical Society, vol.
Brendel, "The ALU+ concept: N-type silicon
solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter," IEEE Transactions on Electron Devices, vol.
As a result, n-type silicon
solar cells are considered as promising alternatives to p-type solar cells for next-generation highly efficient solar cells.
From the comparison between the results obtained for both devices prepared at optimum conditions, it is recognized that the values of the current improved for (n-Sn[O.sub.2]/Si[O.sub.2]/n-Si) due to decrease in the resistivity for n-type silicon
that results in an increase in the electron concentration.
In the industry, phosphorus impurities are added to silicon to produce n-type silicon
. Phosphorus atoms in silicon at low temperatures, less than 20 K, capture an electron and behave like hydrogen atoms.
(doped with phosphorous) has many more free-flowing electrons than pure silicon.
NG, Horsfall, AB, O'Neill, AG, Johnson, CM, "Formation and Role of Graphite and Nickel Silicide in Nickel Based Ohmic Contacts to n-Type Silicon
The joint project is aimed at developing and implementing high-efficiency N-type silicon
solar cells, named PANDA, at Yingli Green Energy's pilot production line in Baoding, China.