The sulcus shows a large number of calcium carbonate crystals arranged epitaxially
with different growth patterns in shape and size that could increase the impulse transmission to the eighth cranial nerve.
coralii are not epitaxially
continuous through several growth lamellae.
Under such conditions, ZrC film will prefer to grow epitaxially
In order to translate these concepts in practical reality, defect free single crystal semiconductor materials were grown from melt and or deposited epitaxially
onto suitable single crystal substrate.
In the Mac Ewan crystallite model illite and smectite layers are intimately epitaxially
connected, stacked either randomly or regularly.
With appropriate methodologies, instrumentation, and software, a multitude of semiconductor device and material parameters can be derived This information is used all along the production chain beginning with evaluation of epitaxially
grown crystals including parameters such as average doping concentration, doping profiles, and carrier lifetimes.
High-resolution microscopy studies have shown that it can attach epitaxially
to bone (4).
Rutile has also been found growing epitaxially
on ilmenite, as mentioned above.
The SSDOI structure was created by transferring strained Si grown epitaxially
, or layer by layer, on relaxed SiGe to a buried oxide layer.
The content of manganese in the semimagnetic semiconductors, bulk crystals, and epitaxially
grown layers was examined by X-ray spectrometry .
A semiconductor deposition process used for epitaxially
"growing" wafers by depositing layers of compound semiconductor materials, such as the III-V compoundsd in diode lasers.
The study showed that dendritic Al-Mn icosahedral crystals grow along three-fold axes, and the decagonal phase nucleates epitaxially
on the icosahedral phase, with coinciding five- and ten-fold axes (12).
P-N junction diodes were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially
(MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.
The designs are based on a P on N hetrostructure epitaxially
grown on CdZnTe substrate.
Although most of the MESFET devices that have found their way into commercial products today are fabricated using ion implantation, epitaxially
grown MESFETs offer significant potential as a commercial radio part.