epitaxy

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Words related to epitaxy

growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate

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References in periodicals archive ?
The sulcus shows a large number of calcium carbonate crystals arranged epitaxially with different growth patterns in shape and size that could increase the impulse transmission to the eighth cranial nerve.
Under such conditions, ZrC film will prefer to grow epitaxially.
In order to translate these concepts in practical reality, defect free single crystal semiconductor materials were grown from melt and or deposited epitaxially onto suitable single crystal substrate.
In the Mac Ewan crystallite model illite and smectite layers are intimately epitaxially connected, stacked either randomly or regularly.
With appropriate methodologies, instrumentation, and software, a multitude of semiconductor device and material parameters can be derived This information is used all along the production chain beginning with evaluation of epitaxially grown crystals including parameters such as average doping concentration, doping profiles, and carrier lifetimes.
High-resolution microscopy studies have shown that it can attach epitaxially to bone (4).
Rutile has also been found growing epitaxially on ilmenite, as mentioned above.
The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer.
A semiconductor deposition process used for epitaxially "growing" wafers by depositing layers of compound semiconductor materials, such as the III-V compoundsd in diode lasers.
The study showed that dendritic Al-Mn icosahedral crystals grow along three-fold axes, and the decagonal phase nucleates epitaxially on the icosahedral phase, with coinciding five- and ten-fold axes (12).
P-N junction diodes were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.
The designs are based on a P on N hetrostructure epitaxially grown on CdZnTe substrate.
Although most of the MESFET devices that have found their way into commercial products today are fabricated using ion implantation, epitaxially grown MESFETs offer significant potential as a commercial radio part.