The technology developed by BeSang allows vertical memory cells
to be stacked on top of conventional CMOS logic within a semiconductor chip, using seamless and unlimited interconnects between device layers.
Small but quick memory cells
can be designed by using the results of the research for the production of computers, mobile phones and smart TVs.
The experimental SRAM chip, produced using a 45nm CMOS process, incorporated two different memory cell
designs, one with a cell area of both 0.
AMD claims that it has made a breakthrough in memory cell
architecture that enables Flash memory products to hold twice as much data as standard Flash - without compromising device endurance, performance or reliability.
In addition, the excellent adhesion between the Ta2O5 interfacial layer and phase-change film has the potential to provide enhanced stability in memory cell
A resting memory cell
may offer a nice vacation to a virus, but sooner or later, the virus will make more copies of itself.
A computer memory cell
stores information -- a digital "zero" or "one" -- in a structure that can be rapidly switched between two readily discernible states.
They will next try to create a memory cell
from elements in column IV, which include silicon, the industry's standard semiconductor, Shum says.
The coolSRAM-1T[TM] core memory cell
employs a transistor and a structural capacitor to implement the storage cell.
T-RAM is a fabless semiconductor company developing a novel SRAM memory process technology, TCCT[TM] (Thin-Capacitively-Coupled-Thyristor), which is expected to have the high performance of SRAM but with a memory cell
size approaching that of DRAM.
As the storage capacity of NAND Flash memory increases rapidly with finer designs, memory cell
structures and functions are undergoing extreme changes, making it increasingly difficult to maintain compatibility between generations.
Stable operation was verified by a 65nm test chip containing an 8Mbit, 6-transistor type SRAM with the world's smallest level memory cell