The proposed memory cell
has been designed at a dimension of 0.
The vertical flash memory cell
is based on well-known SGT technology and uses single crystalline silicon material.
The experimental SRAM chip, produced using a 45nm CMOS process, incorporated two different memory cell
designs, one with a cell area of both 0.
During his 24 year career at Intel, Lai played a critical role in establishing Intel's leadership position in NOR Flash memory, by co-inventing the industry-standard ETOX flash memory cell
and developing nine successive generations of the product.
Rather than encode Is and Os on the basis of the amount of charge stored in a memory cell
, as conventional memory chips do, the UCLA approach encodes data in catenane molecules, each of which has two interlocked rings.
New Memory Cell
Structure Employing Ta2O5 Interfacial Layer
A resting memory cell
may offer a nice vacation to a virus, but sooner or later, the virus will make more copies of itself.
A computer memory cell
stores information -- a digital "zero" or "one" -- in a structure that can be rapidly switched between two readily discernible states.
They will next try to create a memory cell
from elements in column IV, which include silicon, the industry's standard semiconductor, Shum says.
The coolSRAM-1T[TM] core memory cell
employs a transistor and a structural capacitor to implement the storage cell.
T-RAM is a fabless semiconductor company developing a novel SRAM memory process technology, TCCT[TM] (Thin-Capacitively-Coupled-Thyristor), which is expected to have the high performance of SRAM but with a memory cell
size approaching that of DRAM.
As the storage capacity of NAND Flash memory increases rapidly with finer designs, memory cell
structures and functions are undergoing extreme changes, making it increasingly difficult to maintain compatibility between generations.