We report a high performance photodetector based on GaAs Metal- Semiconductor Field Effect Transistor
(MESFET), with very high responsivity, excellent quantum efficiency, high sensitivity, moderate speed, tremendous gain and low power dissipation, surpassing their photodiode, phototransistor and other counterparts.
This work may be used by others in designing higher performance tunneling field effect transistors
which may enable future low power integrated circuits for your mobile device," he added.
The original idea of field effect transistors
dated back to the German scientist Julius Lilienfield in 1925 and a structure closely resembling the MOSFET was proposed in 1935 by Oskar Heil but materials problems foiled early attempts to make functioning devices.
Evolved Machines, in partnership with its affiliate iSense, is developing nanotube-based field effect transistors
(FETS) functionalized by DNA as highly sensitive sensors across a very wide range of targets.
CMOS is made of two types of transistors: positively-charged field effect transistors
(PFETs), and negatively charged FETs (NFETs).
This experiment involved testing submicron double heterostructure field effect transistors
at high temperatures to determine their ability to maintain saturation and pinch-off characteristics.
Another group of researchers at IBM, for instance, theorizes that in terms of logic applications, carbon nanotube field effect transistors
may compete with silicon MOSFETs due to advancements in contact technology.
US Patent 8,169,022 was issued on May 1, 2012, and is entitled "Vertical Junction Field Effect Transistors
and Diodes Having Graded Doped Regions and Methods of Making.
In a research handbook on nanotechnology-related sensor modeling, electrical and electronic engineers and other contributors explore such topics as silicene nanoribbons and nanopores for nanoelectronic devices and applications, the development of a gas sensor model for detecting nitrogen dioxide molecules adsorbed on defect-free nanotubes, graphene-based biosensors: graphene based electrolyte gated graphene field effect transistors
, ion-sensitive field effect transistor
(ISFET) based on carbon materials: the emerging potentials of nanostructured carbon-base ISFET with high sensitivity, and wireless nanosensor networks: prospects and challenges.
They turn to the practical with explanations of cleaning and passivation of GaAs and related alloys, wet etching and photolithography, dry etching, ohmic contacts, Schottky contacts, field effect transistors
, heterojunction bipolar transistors, and wet oxidation of metal insulator semiconductor GaAs devices.
Covering an expanding and highly coveted subject area, Supramolecular Soft Matter enlists the services of leading researchers to help readers understand and manipulate the electronic properties of supramolecular soft materials for use in organic opto-electronic devices, such as photovoltaics and field effect transistors
, some of the most desired materials for energy conservation.
8 Growth Morphologies and Charge Carrier Mobilities of Pentacene Organic Field Effect Transistors
with RF Sputtered Aluminium Oxide Gate Insulators on ITO Glass
The device includes an internal compensation network, integrates the switching Field Effect Transistors
(FETs), and eliminates the need for an external Schottky diode.
The device includes an internal compensation network, integrated switching Field Effect Transistors
(FETs) and eliminates the need for an external Schottky diode.
BiFET uniquely integrates indium gallium phosphide (InGaP)-based heterojunction bipolar transistors (HBTs) with field effect transistors
(FETs) on the same GaAs substrate.