Many field effect transistor
(FET)-based photodetectors functioning in the visible-infrared region have recently been reported.
The tunneling field effect transistors
have not yet demonstrated a sufficiently large drive current to make it a practical replacement for current transistor technology," Rommel asserted, "but this work conclusively established the largest tunneling current ever experimentally demonstrated, answering a key question about the viability of tunneling field effect transistor
The model ATF-511P8 is a high power output, dynamic range and power-added efficiency enhancement-mode pseudomorphic high electron mobility transistor (E-PHEMT) field effect transistor
Each is engineered with Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) controller system and SEM (Separately Excited Motor) drive technologies, resulting in increased battery efficiency, stepless acceleration and improved operator control.
In sections on fundamentals, non-crystalline semiconductors, and thin film transistor circuits and applications, he discusses such topics as resistor-capacitor circuits, modeling threshold voltage shift for circuit design, a transistor as a switch, compensation circuits for displays, and a case study of a pseudo PMOS field effect transistor
HVVi Semiconductors introduced its High Frequency, High Voltage Field Effect Transistor
(HVVFET) architecture with products designed to operate from 24V to 48V and which feature low thermal resistance and high ruggedness.
Startup HVVi Semiconductor offers a new architecture--High Voltage Field Effect Transistor
(HWFET) initially for radar and avionics--designed so that performance increases at higher voltages resulting in a smaller die size and low parasitic capacitance per Watt.
They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor
, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors.
TOKYO -- Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor
(FET) that far surpasses the operating performance of gallium arsenide (GaAs) FET widely used in microwave solid-state amplifiers for radar and satellite microwave communications in the 8GHz to 12GHz X-band frequency range.
The Si3400 is the only PD controller to integrate on-chip diode bridges, a transient surge suppressor and a switching regulator field effect transistor
Nasdaq:SWKS), an industry leader in radio solutions and precision analog semiconductors, today announced it is leveraging a highly innovative bipolar field effect transistor
(BiFET) process technology for its gallium arsenide (GaAs)-based products, enabling it to further differentiate its portfolio and achieve additional cost savings when developing solutions for today's leading handset manufacturers.
Nasdaq: MCHP), a leading provider of microcontroller and analog semiconductors, today announced the TC4451 and TC4452 Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) driver circuits.