In an earlier article (JCT Coatings Tech, June 2010), I presented information on dielectric
analysis (DEA) of coatings, which involves monitoring changes in dielectric
properties such as resistivity or ion mobility with temperature or time in response to the application of an electric field.
The demand of composite dielectric
materials derived from heterogeneous systems where matrix phase is insulating polymer and the dispersed phase is conductive additives are increasingly gaining importance because of their potential applications in aerospace, electrical, and electronic fields such as shielding enclosures, capacitors, sensors, microwave absorber, etc.
The study includes a granular analysis of the global markets for ceramic, aluminum, film and tantalum raw materials, including ceramic dielectric
materials, etched anode and cathode aluminum foils; metalized plastic films and capacitor grade tantalum powder and wire.
The thickness of the gate dielectric
in LSI grows progressively thinner with each new generation of CMOS process technology.
As the first microprocessor manufacturers to announce the use of immersion lithography and ultra-low-K interconnect dielectrics
for the 45nm technology generation, AMD and IBM continue to blaze a trail of innovation in microprocessor process technology," said Nick Kepler, vice president of logic technology development at AMD.
Figure 1 illustrates two options available to a process designer to achieve a 10 percent reduction in effective dielectric
Currently available LTCC materials have relatively low dielectric
constants of about 10; new ceramics with higher permittivities are required to develop integrated filters and capacitors.
The benefit of using high-k gate dielectrics
for flash memory is it enables an increased gate coupling ratio thus allowing increased packing densities.
A NIST researcher has played an important role in influencing the semiconductor industry to refute the previously accepted thermochemical model (or "E-model") of dielectric
breakdown of reliability of ultrathin silicon dioxide.
a manufacturer of dielectric
materials for the semiconductor and flat panel display industries, announced today that it has raised a new financing round to expand its operations.
Thin silicon dioxide dielectrics
exhibit high tunneling current and the impact on device reliability is not well understood.
This new patent covers chemical compositions for several silicon based materials used mainly as interlevel dielectrics
in integrated circuit (IC) manufacturing, typically in applications requiring high aspect ratio gap-fill and planarization combined with thermo-mechanical robustness and optimized electrical performance.
today introduced two new products used as advanced dielectrics
for semiconductor manufacturing.
HSINCHU, Taiwan -- UMC (NYSE:UMC) (TSE:2303), a world leading semiconductor foundry, today announced that its research and development team has achieved a significant engineering milestone by shrinking the Equivalent Oxide Thickness (EOT) of nitrogen doped silicon oxide (Oxy-nitride, SiON) gate dielectrics
to approximately 1.
Kirtley has been involved with the dielectrics
industry since 1981, when he developed and commercialized the first spin-on glass (SOG) dielectrics
at Allied Signal (later merged with Honeywell).